Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Acta Materialia(2013)
摘要
We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3% In content is obtained and found to possess high structural quality. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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关键词
Semiconductor materials,InGaN,Multilayer design,Deposition and fabrication,Thin films
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