Stoichiometry Of Laalo3 Films Grown On Srtio3 By Pulsed Laser Deposition

We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (theta-2 theta scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10(-2) Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures. (C) 2013 AIP Publishing LLC.