Temperature And Frequency Dependencies Of The Switching Field In Glass-Coated Fenbsib Microwires

We are dealing with the temperature and frequency dependencies of the switching field in the glass-coated FeNbSiB microwire. Both dependencies can be described in terms of two contributions to the switching mechanism: magnetoelastic and structural relaxation. We show that by properly setting the frequency of the measurement, it is possible to vary the relative strength of both contributions. Hence, the temperature dependence of the switching field can be tailored according to desired conditions being temperature independent for low (<100 Hz) and high (>500 Hz) frequencies or almost linearly dependent for medium frequency similar to 350 Hz. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691961]