HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer DepositionP. T. Chen,Y. Sun, E. Kim,P. C. McIntyre,W. Tsai,M. Garner,P. Pianetta,Y. Nishi,C. O. ChuiJournal of Applied Physics（2008）引用 71|浏览16AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
