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Analysis of Electrically Biased Paramagnetic Defect Centers in HfO2 and HfxSi1−xO2/(100)Si Interfaces

P. T. Chen,B. B. Triplett,J. J. Chambers,L. Colombo,P. C. McIntyre,Y. Nishi

JOURNAL OF APPLIED PHYSICS（2008）

Cited 17|Views24

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