Moc Intermediate Layer For Fept Magnetic Recording Media

A (001) textured FePt film was deposited on MoC/CrRu/glass at a substrate temperature of 380 degrees C by using magnetron sputtering. The MoC conductive intermediate layer was used to resist the Cr diffusion up to high deposition temperatures and promotes the epitaxial growth of the (001) textured FePt film. The FePt film showed high perpendicular magnetization and the out-of-plane coercivity increased with MoC thickness. The FePt/MoC (5 nm)/CrRu film showed a square out-of-plane magnetic hysteresis loop with a coercivity of 6.0 kOe and a linear-like in-plane loop. A multi-functional MoC intermediate layer exhibited heteroepitaxial relation with FePt and CrRu and was capable of resisting the interlayer diffusion at high deposition temperatures. (C) 2014 AIP Publishing LLC.