Low Temperature Properties Of Spin Valves With Extremely Thin Irmn

The properties of IrMn spin valves with t(IrMn)less than or equal to26 Angstrom are explored at temperatures down to 5 K. The structure is: Ti(50 Angstrom)/NiFe(40 Angstrom)/Co(8 Angstrom)/Cu(30 Angstrom)/Co(30 Angstrom)/IrMn(t Angstrom)/Ti(50 Angstrom) on a Si substrate. The low temperature giant magnetoresistance(GMR) is not greatly affected by the thickness of the IrMn. The thinner the IrMn, the lower the temperature at which the GMR is adversely affected. This is consistent with a reduction in blocking temperature. A number of interesting features in the coercivity and field training are IrMn thickness dependent. (C) 2002 American Institute of Physics.