Analysis of electrically biased paramagnetic defect centers in HfO[sub 2] and Hf[sub x]Si[sub 1−x]O[sub 2]/(100)Si interfaces P T Chen,B B Triplett,J J Chambers,Luigi Colombo,Paul C Mcintyre,Yoshio NishiJournal of Applied Physics（2008）引用 23|浏览7AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
