Structure and Strain Relaxation Effects of Defects in InxGa1−xN EpilayersS. L. Rhode,W. Y. Fu,M. A. Moram,F. C. -P. Massabuau,M. J. Kappers,C. McAleese,F. Oehler,C. J. Humphreys,R. O. Dusane,S. -L. SahontaJournal of applied physics（2014）引用 46|浏览23AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
