Raman and Infrared Thermometry for Microsystems
JOURNAL OF THERMAL SCIENCE AND ENGINEERING APPLICATIONS(2013)
摘要
This paper reports and compares Raman and infrared thermometry measurements along the legs and on the shuttle of a SOI (silicon on insulator) bent-beam thermal microactuator. Raman thermometry offers micron spatial resolution and measurement uncertainties of 610 K. Typical data collection times are a minute per location leading to measurement times on the order of hours for a complete temperature profile. Infrared thermometry obtains a full-field measurement so the data collection time is on the order of a minute. The spatial resolution is determined by the pixel size, 25 mu m by 25 mu m for the system used, and infrared thermometry also has uncertainties of 610K after calibration with a nonpackaged sample. The Raman and infrared measured temperatures agreed both qualitatively and quantitatively. For example, when the thermal microactuator was operated at 7 V, the peak temperature on an interior leg is 437 K610K and 433K610K from Raman and infrared thermometry, respectively. The two techniques are complementary for microsystems characterization when infrared imaging obtains a full-field temperature measurement and Raman thermometry interrogates regions for which higher spatial resolution is required.
更多查看译文
关键词
microthermometry,Raman spectroscropy,Infrared thermography,SOI silicon,thermal microactuator
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络