Improvements Of Movpe Grown (11(2)Over-Bar2) Oriented Gan On Pre-Structured Sapphire Substrates Using A Sinx Interlayer And Hvpe Overgrowth

In this article two methods for imprtance of (11 (2) over bar2) oriented semipolar GaN grown by MOVPE on presturcuted sapphire substraes are invstiped. The integrateion of SiNx. Interlayer helps to obain bet crystals quaity also the overgrowth of the MOVPE samples by HVPE as a way to obtain smoother GaN surface. A High incorporation of oxygen on (11 (2) over bar2) oriened GaN compared to (0001) oriented GaN grown by HVPE was observed.