Enable Abrupt Junction And Advanced Salicide Formation With Dynamic Surface Annealing

Shiyu Sun,Shankar Muthukrishnan,Ben Ng, Stephen Nagy, Alan Zojaji,Rubi Lapena,Yihwan Kim, Vivek Rao, Dimitry Kouzminov,Naushad Variam, Stephen Moffatt,Adam Brand

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12（2012）

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摘要

3D MOSFET technology, such as FinFETs, is the central semiconductor inflection that brings new challenges and opportunities to the semiconductor industry. Dynamic surface annealing (DSA) enables the IC manufactures to solve many of the challenges. In this paper, we demonstrate DSA can form abrupt source/drain extension, which is essential to minimize the device's parasitic resistance. DSA also improves salicide morphology, minimize salicide piping defects, and reduce junction leakage. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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关键词

ultra-shallow junction,salicide,Astra DSA

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