Mechanism of Nonlinear Switching in HfO 2 -Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

In this paper, the nonlinear switching mechanism of the Ti/HfO2/Al2O3/TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device can be revealed by inserting a large bandgap of an Al2O3 thin layer between the TiN bottom electrode and the HfO2 switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling...