Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs

Properties of InGaAs buried-channel quantum-well MOSFETs affected by the barrier and buffer layers are analyzed by numerical simulations to assist device engineering and optimization. The interplay between the charge-neutrality level position at the barrier/dielectric interface and conduction band discontinuity at the barrier/channel interface is shown to critically impact the achievement of an en...