Grain-Orientation Induced Quantum Confinement Variation in FinFETs and Multi-Gate Ultra-Thin Body CMOS Devices and Implications for Digital Design

S H Rasouli,Kazuhiko Endo,J F Chen,Navab Singh,Kaustav Banerjee

IEEE Transactions on Electron Devices（2011）

引用 18|浏览6

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摘要

This paper identifies and investigates a new source of random threshold voltage variation, which is referred to as Grain-Orientation-induced Quantum Confinement (GOQC) in emerging ultra-thin-body metal-gate complementary metal-oxide-semiconductor (CMOS) devices including FinFET, tri-gate, and nanowire field-effect transistors. Due to the dependence of the work function of the metal gates on their ...

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关键词

Logic gates,Threshold voltage,FinFETs,CMOS integrated circuits,Metals,Nanoscale devices,Semiconductor process modeling

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