A Robust Algorithm for Microscopic Simulation of Avalanche Breakdown in Semiconductor Devices

IEEE Transactions on Electron Devices(2015)

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摘要
Avalanche breakdown can occur during switching of power devices and is difficult to simulate due to its abrupt onset and strong nonlinear behavior. In addition, it severely degrades the numerical robustness of deterministic solvers for the Boltzmann equation (BE), on which the transport simulations are based. A continuation method is therefore introduced, with which robust and efficient simulation...
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关键词
Charge carrier processes,Avalanche breakdown,Mathematical model,Convergence,Numerical models,Semiconductor process modeling,P-n junctions
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