Interface Engineering of Ag- -Based Conductive Bridge RAM for Reconfigurable Logic Applications

G Palma,E Vianello,Olivier Thomas,Manan Suri,S Onkaraiah,A Toffoli,C Carabasse,M Bernard,A Roule,O Pirrotta,G Molas,B De Salvo

IEEE Transactions on Electron Devices（2014）

引用 16|浏览64

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摘要

In this paper, we show performance and reliability improvement of Ag- GeS2-based conductive bridge RAM (CBRAM) devices by addition of a 2-nm-thick HfO2 layer between the electrolyte and the W bottom electrode. Our optimized dual-layer electrolyte stack (2-nm HfO2-30-nm GeS2) leads to a resistance ratio (ROFF/RON) higher than 106 and projected 10 years read disturb immunity at 0.04 V. The improved ...

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关键词

Hafnium compounds,Resistance,Switches,Logic gates,Voltage measurement,Random access memory,Computer architecture

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