Characteristics of $\hbox{Si/SiO}_{2}$ Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

P C Huang,S L Wu,S J Chang,Y T Huang,J F Chen,C T Lin,Mike Ma,Osbert Cheng

IEEE Transactions on Electron Devices（2011）

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摘要

In this paper, for the hybrid orientation technology (HOT), we propose a modified amorphization/templated recrystallization (ATR) process to improve the material quality. The characterization of Si/SiO2 interface properties for complementary metal-oxide-semiconductor (CMOS) devices fabricated on HOT wafers is demonstrated through charge pumping (CP) and low-frequency (1/f) noise measurements simul...

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关键词

MOSFETs,Silicon,Annealing,CMOS integrated circuits,Logic gates,Noise,Substrates

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