Note on the Temperature Dependence of the Interbase Resistance of a Unijunction Transistor

The temperature dependence of the interbase resistance of heavily n-doped unijunction transistors (2N 2646) in the 150–410°K range is shown to obey an empirical relation of the form RT=RTo exp [B(T—To], where, RT and RTo are interbase resistance at T K and T0°K respectively, and B is a constant of the UJT channel material.