Controlled n -doping in chemical vapour deposition grown graphene by antimony

We have studied the effects of antimony (Sb) doping on graphene grown by chemical vapour deposition without any significant change in its electrical properties. By increasing the metal thickness from 1 to 5 nm, we found a shift in the wave numbers of Raman G and two-dimensional (2D) peaks consistent with n-doping and a change in the Fermi level of the graphene into the conduction band. The relative intensity of the D peak to the G peak did not show a significant change and that of the 2D peak to the G peak remained at a large enough number as a function of metal thickness, implying little degradation by the metal dopants. Transport measurements also confirm the n-doping of graphene through a shift of Dirac point in the transfer characteristics and the quality preservation with little changes in mobility. We also report on the formation of a p-n junction by metal doping on selected areas of the graphene and their electrical properties with transfer characteristics and Hall measurements.