订阅小程序
旧版功能

Control of Carbon Content in Amorphous Gete Films Deposited by Plasma Enhanced Chemical Vapor Deposition (Pe-Mocvd) for Phase-Change Random Access Memory Applications

P. D. Szkutnik,M. Aoukar, V. Todorova, L. Angelides,B. Pelissier,D. Jourde,P. Michallon,C. Vallee,P. Noe

Journal of Physics D Applied Physics（2015）

引用 32|浏览4
关键词
Phase Change Materials
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要