Analytical Current Transport Modeling of Graphene Nanoribbon Tunnel Field-Effect Transistors for Digital Circuit Design

M S Fahad,A K Srivastava,A K Sharma,Clay Mayberry

IEEE Transactions on Nanotechnology（2016）

引用 37|浏览18

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摘要

A semi-classical and a semi-quantum current transport model for p-i-n n-type armchair graphene nanoribbon tunnel field effect transistor (TFET) are studied analytically. The results are compared with the numerical quantum transport simulation method using an atomistic Schrodinger-Poisson solver within the non-equilibrium Green function (NEGF) formalism. The channel length and width are 20 and 4.9 ...

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关键词

Graphene,Tunneling,Logic gates,Numerical models,Analytical models,Photonic band gap

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