Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2x10(16) Ar/cm(2) and 2.5x10(16) Zn/cm(2), respectively. The refractive indices of the implanted silica layers before and after annealing at 300 degrees C and 600 degrees C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500 degrees C. It was found that the implanted Ar escapes from the sample at 300 degrees C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.