Performance of Al 0.24 Ga 0.76 As/In 0.22 Ga 0.78 As double-heterojunction HEMTs with an as deposited and a buried gateH R Chen,W S Lour,C C Su,Yih Chung Chang,G H Chen,W T Chen,S Y Chiu,M K HsuSemiconductor Science and Technology（2006）引用 30|浏览19暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
