GaP field-effect transistors with a Schottky gate for high-temperature integrated circuitsYu V Zhilyaev, A G Kechek,Yu A Lifshitz, V M Marakhonov,G Simin,L M Fedorov, I E ChebuninaTechnical Physics Letters（1994）引用 23|浏览1暂无评分关键词integrated circuit,field effect transistorAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
