Analysis of the performance of CMOS APS imagers after proton damage

In this work we have irradiated a standard commercial CMOS imager with a 24MeV proton beam at INFN Laboratori Nazionali del Sud, Catania (Italy) up to a nominal fluence of 10(14) [protons/cm(-2)]. The device under test was a standard VGA detector, fabricated with a 130 nm technology without radiation hardening. During the irradiation the detector was operated to monitor the progressive damaging of the sensor and the associated on-pixel electronics. After 18 months from the irradiation damage session, with the detector stored at room temperature, a study on the detection efficiency and charge collection capability has been carried out using fluorescent X-ray photons, emitted from copper target. We found that the detector is still working at 10(13) protons/cm(2), with a moderate increase of the noise and a slightly decrease of the detection capabilities.