Temperature dependence of the current generated in Si bulk
JOURNAL OF INSTRUMENTATION(2013)
摘要
The dependence of the current generated in silicon bulk is investigated both theoretically and experimentally. It is demonstrated to be compatible with I proportional to T(2)e(-1.21eV/2kT) expected for the generation via a level near the middle of the band gap.
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关键词
Si microstrip and pad detectors,Radiation-hard detectors,Particle tracking detectors (Solid-state detectors)
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