Spectral performance of DEPFET and gateable DEPFET macropixel devices

Future x-ray observatories, such as the proposed ATHENA+ mission, will investigate bright and rapidly evolving radiation sources. To reach the scientific goals, high speed, spatial resolving sensors with excellent spectroscopic performance are mandatory. Well suited for this task are matrices of Depleted P-channel Field Effect Transistors (DEPFETs). DEPFETs provide intrinsic signal amplification, 100 percent fill factor, charge storage capability and a low read noise. Previous studies of DEPFET matrices of 256 x 256 pixels demonstrated an excellent energy resolution of 126 eV FWHM at 5.9 keV (compared to the theoretical Fano limit 120 eV). Usually these matrices are read out on demand, using e. g. the ASTEROID ASIC. Because the DEPFET is always sensitive, charge collected during the readout, causes so called misfits, which increase the background. For low frame rates this can be neglected. However, for fast timings, as suggested for ATHENA+, this effect reduces the spectral performance. We will present measurements on DEPFET macropixel structures, read out using a semi-Gaussian shaper, which demonstrate the excellent spectroscopic performance of these devices. Furthermore we will investigate the effect of misfits on the spectral background of DEPFET devices read out on demand. These measurements show the necessity to suppress misfits when the devices are operated for fast timing modes. As will be shown this can be done using so called gateable DEPFETs. The general advantage of gateable DEPFETs at fast timings, in terms of peak-to-background ratio will be demonstrated.