Molecular Dynamics Simulation Of Chemical Reaction Assisted Grinding Of Silicon Wafer By Controlling Interatomic Potential Parameters

This paper reports a few molecular dynamics simulations of chemo-mechanical grinding (CMG) and chemical mechanical polishing (CMP) of silicon wafer by controlling the interatomic potential parameters to imitate the chemo-mechanical or mechano-chemical reactions between an abrasive grain and a Si wafer. Some comparisons among diamond grinding, CMG and CMP were made by using the proposed simulation models. From the simulation results, reductions of surface damages, wears of abrasive grain and scratching forces in CMG were confirmed to be same as observed in actual CMG experiments by a CeO2 abrasive wheel, and the availability of proposed simulation model was verified to some extent, even though further improvements in both of the models, especially in the CMP model, are necessary.