RFCMOS Technology from 0.25μm to 65nm: the State of the Art
PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE(2004)
关键词
CMOS integrated circuits,integrated circuit design,radiofrequency integrated circuits,0.25 micron to 65 nm,CMOS RFIC,FET device shrinkage,RFCMOS technology,low cost RF circuits,on-chip integration capacity,technology node scaling
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