Effects of bonding technology and thinning process in three-dimensional integration on device characteristics.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY(2012)
摘要
This research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 mu m technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 degrees C and bonding force up to 2.5 x 10(5) Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 mu m.
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关键词
n-MOSFET Devices,Integration,Bonding Technology,Thinning Process
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