One-Dimensional Si-In-Si(001) Template For Single-Atom Wire Growth

APPLIED PHYSICS LETTERS(2010)

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摘要
Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dimers wide the Haiku core-formed by hydrogenation of self-assembled Bi-nanolines on Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to,vicinal surfaces for nanoscale patterning. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483164]
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关键词
scanning tunneling microscopy,nanostructuring,self assembly,silicon,1d structures,scanning tunneling microscope,nanowires,pattern formation,self organization
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