4-Bit Per Cell NROM Reliability

B Eitan,G Cohen,A Shappir,E Lusky,A Givant,M Janai,I Bloom,Y Polansky,O Dadashev,A Lavan, R Sahar,E Maayan

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST（2005）

Cited 144|Views7

Key words

circuit reliability,random-access storage,read-only storage,3 Mbit/s,4 bit,NROM cell,NROM reliability,error correction scheme,error detection scheme,fast programming algorithm

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