Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material

In this paper, dual metal-double gate tunnel field effect transistor (DMG-DGTFET) is discussed for mono hetero dielectric gate material. The hetero dielectric that we have used at the gate is a combination of SiO _2 and HfO _2 . The DMG technique is used to optimize the performance of DGTFET along with the mono/hetero dielectric gate material. The results obtained from the simulation are discussed using energy band diagram, tunneling barrier width and compared with hetero mono dielectric gate. With the application of hetero dielectric to the DMG-DGTFET, the advantages of both the techniques combine and the results shows that higher I_ON /I_OFF ratio (2× 10^9) compared to the mono dielectric case (2.5× 10^8) . The average subthreshold slope also improves from 58 mV/decade in mono dielectric to 48 mV/decade in hetero dielectric DMG-DGTEFT. All the simulations are done in Synopsys TCAD for a channel length of 25 nm using the non-local tunneling model.