7.72 ppm/°C, ultralow power, high PSRR CMOS bandgap reference voltage

This paper describes a CMOS bandgap reference fabricated in 0.18μm TSMC CMOS technology, with ultralow power consumption, high Power Supply Rejection Ratio (PSRR) and less temperature drift over wide temperature range. This is achieved by using a straightforward 3 bits trimming circuit design includes high ohmic polysilicon unit resistors to save area and 8 to 1 multiplexer digitally controlled to switch between the 8 different outputs. The performance of the design was verified experimentally. The implemented bandgap reference voltage measured has showed a temperature coefficient of 7.72 ppm/°C over temperature range of -40°C to 125°C on wide supply voltage from 2.6V to 4V and consumes a supply current of 1.054μA at 4V, PSRR of -62dB at 1GHz are easily achieved, which make it widely applicable in portable equipment. The active area of the circuit is 0.1 mm2.