Robustness of the base resistance extraction method for SiGe HBT devices

F Stein, D Celi,Cristell Maneux,N Derrier,P Chevalier

Semiconductor Conference Dresden-Grenoble（2013）

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摘要

In device modelling and simulation the base resistance is a crucial parameter for RF characteristics such as the maximum frequency of oscillation (fmax) and noise figure (NFmin). The robustness and reliability of a well-established extraction procedure is analysed using measurement data from a state-of-the-art SiGeC HBT technology. The influence of variation of key technology parameters on the extraction flow and extracted parameters is evaluated using data from a process split. The sheet resistances obtained from the measured date are used in a simulation trial. The suitability and robustness of the method is further evaluated using synthetic data from numerical device simulation with one-dimensional test structures.

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关键词

ge-si alloys,heterojunction bipolar transistors,semiconductor device models,semiconductor device reliability,semiconductor materials,hbt devices,rf characteristics,sigec,base resistance extraction method,device modelling,device simulation,extraction flow,maximum oscillation frequency,measurement data,noise figure,numerical device simulation,one-dimensional test structures,process split,sheet resistances,synthetic data

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