Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology

Andrej Rumiantsev,Paulius Sakalas,F Pourchon,P Chevalier,N Derrier,Michael Schroter

Bipolar/BiCMOS Circuits and Technology Meeting（2010）

引用 3|浏览9

暂无评分

摘要

On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced BiCMOS process. We discuss the design of customized calibration standards addressing specifics of the silicon BiCMOS process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT's.

查看译文

关键词

electric breakdown,heterojunction bipolar transistors,silicon-on-insulator,dc current gain,bipolar transistors,breakdown characteristics,breakdown voltage,temperature dependence,temperature interaction,bicmos process technology,rf circuits,s-parameters,silicon-germanium hbt,calibration,silicon on insulator,s parameters,impedance,impedance measurement,silicon,transistors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要