Fin bending due to stress and its simulation

Gencer, A.H., Tsamados, D., Moroz, V.

Simulation of Semiconductor Processes and Devices（2013）

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摘要

Modern CMOS and memory devices feature fins, which are high aspect ratio elements. While narrow and tall fins enhance electrical characteristics, they are mechanically weak structures. Unexpected failure mechanisms, such as fin bending and even cracking can arise in such devices. This paper discusses such mechanisms and offers a methodology to simulate them.

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关键词

cmos integrated circuits,mosfet,bending,cracks,failure (mechanical),semiconductor device models,cmos devices,finfet,cracking,failure mechanisms,fin bending,high aspect ratio elements,mechanical stress,memory devices,leaning,stress engineering

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