Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver

Kelly, A.T.,Fleming, P.R.,Brown, R.D., Wong, F.

Radiation Effects Data Workshop（2010）

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摘要

Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.

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关键词

transceivers,ds16f95 rs-485 transceiver,onset let,tid effects,temperature measurement,testing,operant conditioning

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