Study of N-induced traps due to nitrided metal gate in HK/MG nMOSFETs

M Casse,X Garros,O Weber,F Andrieu,G Reimbold,F Boulanger

Solid-State Device Research Conference（2010）

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摘要

We report an experimental study of the defects induced by the TiN metal gate. N-induced defects are evidenced and energy profile through the Si band gap is measured by original spectroscopic charge pumping measurements. The density of defects is then correlated to the electron mobility degradation and compared to a theoretical model.

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关键词

mosfet,electron mobility,energy gap,high-k dielectric thin films,n-induced defects,n-induced traps,band gap,density of defects,electron mobility degradation,energy profile,nmosfet,nitrided metal gate,spectroscopic charge pumping measurements,tin,silicon,temperature measurement,charge pump,logic gates

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