Effect of SCH/barrier layer thickness on K-factor of quantum dot lasers

Nami Yasuoka,Mitsuru Ishida,Mitsuru Ekawa,Tsuyoshi Yamamoto,Masaomi Yamaguchi,Kenichi Nishi,Mitsuru Sugawara,Yasuhiko Arakawa

Lasers and Electro-Optics Pacific Rim（2013）

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摘要

The effect of the SCH/barrier layer region on the K-factor of quantum-dot lasers was investigated. It was found that thinner SCH/barrier layers lead to a shorter effective capture/relaxation time and a reduced K-factor.

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关键词

iii-v semiconductors,gallium arsenide,quantum dot lasers,gaas,sch-barrier layer thickness effect,capture-relaxation time,reduced k-factor,separate confinement heterostructure

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