Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz
Electron Devices, IEEE Transactions（2013）
摘要
Flexible large area electronics promise to enable new devices such as rollable displays and electronic skins. Radio frequency (RF) applications demand circuits operating in the megahertz regime, which is hard to achieve for electronics fabricated on amorphous and temperature sensitive plastic substrates. Here, we present self-aligned amorphous indium-gallium-zinc oxide-based thin-film transistors (TFTs) fabricated on free-standing plastic foil using fabrication temperatures . Self-alignment by backside illumination between gate and source/drain electrodes was used to realize flexible transistors with a channel length of 0.5 μm and reduced parasitic capacities. The flexible TFTs exhibit a transit frequency of 135 MHz when operated at 2 V. The device performance is maintained when the TFTs are bent to a tensile radius of 3.5 mm, which makes this technology suitable for flexible RFID tags and AM radios.
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关键词
ii-vi semiconductors,uhf transistors,amorphous semiconductors,electrodes,flexible electronics,gallium compounds,indium compounds,thin film transistors,wide band gap semiconductors,zinc compounds,am radios,ingazno,amorphous substrates,backside illumination,electronic skins,fabrication temperatures,flexible rfid tags,flexible tft,flexible large area electronics,flexible self-aligned amorphous thin-film transistors,free-standing plastic foil,frequency 135 mhz,gate electrodes,radiofrequency application,radius 3.5 mm,reduced parasitic capacity,rollable displays,self-aligned amorphous indium-gallium-zinc oxide-based thin-film transistors,size 0.5 mum,source-drain electrodes,submicrometer channel length,temperature sensitive plastic substrates,transit frequency,voltage 2 v,indium–gallium–zinc oxide,mechanical strain,thin-film transistor
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