Integrated photodiode characterization in a SiGe BiCMOS process

Alireza Sharifbakhtiar,Shayan Shahramian,Alain Rousson,Hemesh Yasotharan,Tony Chan Carusone

Santa Fe, NM（2013）

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摘要

In this paper three photodetector structures were simulated, fabricated and characterized at 850nm in a SiGe BiCMOS process. The measurement and simulation results suggest that the additional vertical layers offered by SiGe process compared to CMOS can facilitate higher detector bandwidth at the expense of reduced low frequency responsivity.

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关键词

bicmos integrated circuits,ge-si alloys,frequency response,integrated optics,photodetectors,photodiodes,bicmos process,sige,frequency responsivity,integrated photodiode,detectors,bandwidth

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