Properties of shunt-protected tunneling devices for the Electron Counting Capacitance Standard (ECCS) experiment at PTB

Benedetta Camarota,S V Lotkhov,Hansjoerg Scherer,Thomas Weimann,P Hinze,A B Zorin

Precision Electromagnetic Measurements（2010）

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摘要

We report on the progress in the Electron-Counting-Capacitance-Standard (ECCS) experiment. In particular, we address electrostatic breakdown in metallic single-electron tunneling (SET) structures fabricated on high-quality insulating substrates, An approach was developed via on-chip silicon shunts protecting the high-ohmic nanoscale tunnel junctions against damage.

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关键词

capacitance,counting circuits,electric breakdown,single electron devices,substrates,tunnelling,eccs experiment,ptb,electron counting capacitance standard experiment,electrostatic breakdown,high-ohmic nanoscale tunnel junctions,high-quality insulating substrates,metallic set structures,metallic single electron tunneling structures,on-chip silicon shunts,shunt protected tunneling devices properties,voltage,tunneling,circuits,switches,temperature,electrons,chip,fabrication,system on a chip

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