Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
Electron Devices, IEEE Transactions（2013）
摘要
We introduce a new structure for low-temperature polycrystalline silicon thin-film transistors (TFTs). This bridged-grain structure can reduce the threshold voltage and the subthreshold swing, increase the on-off ratio, and suppress leakage current and kink effect of TFTs significantly. This technique can be applied to all polycrystalline silicon TFTs, including those made by solid-phase crystallization, metal-induced crystallization, metal-induced lateral crystallization, and excimer laser annealing.
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关键词
crystallisation,laser beam annealing,thin film transistors,bridged-grain polycrystalline silicon thin-film transistor,bridged-grain structure,excimer laser annealing,leakage current suppression,metal-induced crystallization,metal-induced lateral crystallization,solid-phase crystallization,subthreshold swing reduction,threshold voltage reduction,kink effect,low-temperature polycrystalline silicon (ltps),short-channel effect,thin-film transistors (tfts),short channel effect
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