Design and application of Van Der Pol oscillator using NDR circuit

Kwangjow Gan,Zhengjie Jiang,Dinyuen Chan,Chershiung Tsai, Jiansyong Huang,Zhenkai Kao,Wenkuan Yeh

Next-Generation Electronics（2013）

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摘要

We present a Van Der Pol (VDP) oscillator which is composed of a negative-differential-resistance (NDR) circuit, an inductor, and a capacitor. The core NDR circuit is consisted of five Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) device. When an external periodic signal is inputted in such circuit, it outputs various kinds of signal waveforms including the chaos signals and bifurcation sequences. A dynamic frequency divider circuit using the long-period behavior of the NDR-based chaos circuit is demonstrated. This circuit is designed using a standard 0.18 μm BiCMOS technique.

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关键词

bicmos integrated circuits,mis devices,mosfet,bifurcation,capacitors,chaos,elemental semiconductors,frequency dividers,heterojunction bipolar transistors,inductors,integrated circuit design,relaxation oscillators,silicon,bicmos technique,hbt device,mos devices,ndr circuit,ndr-based chaos circuit,vdp oscillator,van der pol oscillator,bifurcation sequences,capacitor,chaos signals,circuit design,dynamic frequency divider circuit,heterojunction bipolar transistor device,inductor,negative-differential-resistance circuit,periodic signal,silicon-based metal-oxide-semiconductor field-effect transistor devices

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