W-band GaN MMIC with 842 mW output power at 88 GHz

M Micovic,A Kurdoghlian,K Shinohara,Shawn D Burnham,I Milosavljevic,Ming Hu,A Corrion,A Fung,Robert Lin,Lorene Samoska,Pekka Kangaslahti,Bjorn H Lambrigtsen,Paul F Goldsmith,William S Wong,A Schmitz,P Hashimoto,P J Willadsen,D H Chow

Microwave Symposium Digest（2010）

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摘要

We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.

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关键词

indium compounds,mmic,mmic amplifiers,gan,power 842 mw,gain 9.3 db,frequency 88 ghz,w-band power module,solid state technology,power amplifiers,gallium compounds,millimeter-wave,w-band,inp hemt,high electron mobility transistors,w-band gan mmic,solid state power amplifiers,power generation,frequency,transistors,gain,topology,chip,continuous wave,millimeter wave,chirp,power amplifier

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