InGaAsN as absorber in APDs for 1.3 micron wavelength applications

J S Ng,S L Tan,Y L Goh,C H Tan,Jpr David,J Allam,S J Sweeney,A R Adams

Indium Phosphide & Related Materials（2010）

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摘要

Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al0.8Ga0.2As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al0.8Ga0.2As.

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关键词

iii-v semiconductors,aluminium compounds,avalanche photodiodes,indium compounds,leakage currents,p-i-n photodiodes,photonic band gap,apd,al0.8ga0.2as,ingaasn,absorber,p-i-n diodes,reverse leakage current density,stable photoresponse,wavelength 1310 nm,avalanche photodiode,gallium arsenide,leakage current

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