Enhancement of Open-circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides

Electron Device Letters, IEEE(2013)

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摘要
Surface passivation of solar cells is investigated using CF4 plasma treatment on low-temperature oxides to enhance the open-circuit voltage of the solar cells. Low-temperature oxides grown by a nitric acid solution are treated with the CF4 plasma. Solar cells undergoing this scheme show an improved performance, including low-saturation current density and good quantum efficiency at short wavelengths. Experimental results demonstrate that the CF4 plasma pretreatment on low-temperature oxides can significantly improve the open-circuit voltage, short-circuit current, and fill factor for silicon wafer-based solar cells. This technique is very promising for in-line solar cell manufacturing.
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carbon compounds,current density,elemental semiconductors,low-temperature techniques,passivation,plasma materials processing,silicon,solar cells,CF4,CF4 plasma treatment,Si,fill factor,in-line solar cell manufacturing,low-saturation current density,low-temperature oxides,nitric acid oxides,open-circuit voltage,open-circuit voltage enhancement,quantum efficiency,short-circuit current,silicon wafer-based solar cells,surface passivation,${rm CF}_{4}$ plasma,low-temperature oxides,open-circuit voltage,surface passivation
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