Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters

Rickard Lovblom,Ralf Fluckiger,O Ostinelli,Maria Alexandrova,C R Bolognesi

Electron Device Letters, IEEE（2013）

引用 8|浏览16

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摘要

Recombination effects in GaAsSb-based double-heterojunction bipolar transistors featuring AlInP and GaInP emitters are investigated. AlInP emitters provide a reduced intrinsic recombination but result in a significantly increased base surface recombination in comparison to GaInP emitters. Photoluminescence measurements confirm that the GaAsSb surface after etching AlInP has a higher recombination velocity and exhibits a greater sensitivity to the passivation method than when a GaInP emitter is used.

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关键词

iii-v semiconductors,aluminium compounds,arsenic compounds,etching,gallium compounds,heterojunction bipolar transistors,indium compounds,photoluminescence,alinp,alinp emitter,dhbt,gaassb,gainp,gainp emitter,double-heterojunction bipolar transistor,emitter size effect,passivation method,photoluminescence measurement,recombination effect,recombination velocity,current gain,double-heterojunction bipolar transistors (dhbts),millimeter-wave transistors

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